Characterization and modeling of power MOSFET switching times variations under constant electrical stress
| dc.contributor.author | Sezgin, Hatice Gui | |
| dc.contributor.author | Ozcelep, Yasin | |
| dc.date.accessioned | 2025-10-18T10:10:46Z | |
| dc.date.created | 2015 | |
| dc.date.issued | 2015 | |
| dc.department | Bartın Üniversitesi | |
| dc.description.abstract | In this paper, we proposed a simple and accurate degraded power MOSFET model for digital applications. The model provides to determine the electrical stress induced changes in power MOSFET switching characteristics. To establish the degraded power MOSFET and stress induced changes in switching parameters relation we consider the on-state-resistance of the power MOSFET as a voltage controlled resistor. We implemented a voltage non-linearly dependent resistor model in Pspice. We compared the experimental and simulation results to explore the model capability. (C) 2015 Elsevier Ltd. All rights reserved. | |
| dc.description.sponsorship | Istanbul University Research Fund [31768] | |
| dc.description.sponsorship | The authors would like to thank Istanbul University Research Fund for this financial support. This work was partially supported by Istanbul University Research Fund with the project code 31768. | |
| dc.identifier.doi | 10.1016/j.microrel.2015.01.002 | |
| dc.identifier.endpage | 497 | |
| dc.identifier.issn | 0026-2714 | |
| dc.identifier.issn | 1872-941X | |
| dc.identifier.issue | 3-4 | |
| dc.identifier.orcid | Sezgin-Ugranli, Hatice Gul/0000-0003-1711-7806 | |
| dc.identifier.orcid | OZCELEP, Yasin/0000-0002-5943-5952 | |
| dc.identifier.scopus | 2-s2.0-84923321407 | |
| dc.identifier.scopusquality | Q1 | |
| dc.identifier.startpage | 492 | |
| dc.identifier.uri | https://doi.org/10.1016/j.microrel.2015.01.002 | |
| dc.identifier.uri | https://hdl.handle.net/11772/22036 | |
| dc.identifier.volume | 55 | |
| dc.identifier.wos | WOS:000350920500005 | |
| dc.identifier.wosquality | Q3 | |
| dc.indekslendigikaynak | Web of Science | |
| dc.indekslendigikaynak | Scopus | |
| dc.language.iso | en | |
| dc.publisher | Pergamon-Elsevier Science Ltd | |
| dc.relation.ispartof | Microelectronics Reliability | |
| dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | |
| dc.rights | info:eu-repo/semantics/closedAccess | |
| dc.snmz | WoS_20251016 | |
| dc.subject | Electrical Stress | |
| dc.subject | Power Mosfet | |
| dc.subject | Mosfet Switch | |
| dc.subject | Degradation Modeling | |
| dc.title | Characterization and modeling of power MOSFET switching times variations under constant electrical stress | |
| dc.type | Article | |
| dspace.entity.type | Publication |










