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Investigation of VDMOSFET's switching power dissipation changes under constant electrical stress

dc.contributor.authorHatice Gul Sezgin-Ugranli,Yasin Ozcelep
dc.date.accessioned2023-02-10T12:58:16Z
dc.date.available2023-02-10T12:58:16Z
dc.date.issued2018
dc.identifier10.1016/j.mejo.2018.06.004
dc.identifier.issn0
dc.identifier.urihttps://dx.doi.org/10.1016/j.mejo.2018.06.004
dc.identifier.urihttp://hdl.handle.net/11772/12919
dc.sourceMICROELECTRONICS JOURNAL
dc.subjectGeneral Engineering
dc.titleInvestigation of VDMOSFET's switching power dissipation changes under constant electrical stress
dc.typeArticle
dc.identifier.volume78
dc.identifier.issue0


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