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A New Approach for VDMOSFETs' Gate Oxide Degradation Based on Capacitance and Subthreshold Current Measurements Under Constant Electrical Stress

dc.contributor.authorHatice Gul Sezgin-Ugranli,Yasin Ozcelep
dc.date.accessioned2023-02-10T12:58:37Z
dc.date.available2023-02-10T12:58:37Z
dc.date.issued2018
dc.identifier10.1109/TED.2018.2808162
dc.identifier.issn1557-9646
dc.identifier.urihttps://dx.doi.org/10.1109/TED.2018.2808162
dc.identifier.urihttp://hdl.handle.net/11772/12986
dc.sourceIEEE TRANSACTIONS ON ELECTRON DEVICES
dc.subjectElectrical and Electronic Engineering
dc.titleA New Approach for VDMOSFETs' Gate Oxide Degradation Based on Capacitance and Subthreshold Current Measurements Under Constant Electrical Stress
dc.typeArticle
dc.identifier.volume65
dc.identifier.issue4


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